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| New Product SUD50N10-18P Vishay Siliconix N-Channel 100-V (D-S), 175 C MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.0185 at VGS = 10 V ID (A)a 50 Qg (Typ.) 48 nC FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg Tested * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * Primary Side Switch * Isolated DC/DC Converter D G Drain Connected to Tab G D S S N-Channel MOSFET Top View Ordering Information: SUD50N10-18P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 100 C TA = 25 C TA = 100 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 100 C TA = 25 C TA = 100 C Symbol VDS VGS Limit 100 20 50a 39 8.2b 5.8b 100 50a 2.0b 45 101 136.4 68.2 3.0b 1.5b - 55 to 175 Unit V Continuous Drain Current (TJ = 150 C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 69846 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 Steady State Steady State Symbol RthJA RthJC Typical 40 0.85 Maximum 50 1.1 Unit C/W New Product SUD50N10-18P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 50 A, di/dt = 100 A/s, TJ = 25 C IS = 15 A 0.85 80 160 57 23 TC = 25 C 50 100 1.5 120 240 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 50 V, RL = 1.0 ID 50 A, VGEN = 10 V, Rg = 1 f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 50 A VDS = 50 V, VGS = 0 V, f = 1 MHz 2600 230 80 48 16 13 1.6 12 10 18 8 2.5 20 20 35 15 ns 75 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VDS = 15 V, ID = 15 A 50 0.015 33 0.0185 2.5 100 110 - 12.5 5 100 1 50 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69846 S-81956-Rev. B, 25-Aug-08 New Product SUD50N10-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 VGS = 10 thru 8 V 80 I D - Drain Current (A) VGS = 7 V 60 I D - Drain Current (A) 1.6 2.0 1.2 40 0.8 TC = 25 C 0.4 TC = 125 C TC = - 55 C 0.0 20 VGS = 6 V 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 75 TC = - 55 C R DS(on) - On-Resistance () g fs - Transconductance (S) 60 0.027 0.036 Transfer Characteristics 45 TC = 25 C TC = 125 C 0.018 VGS = 10 V 30 0.009 15 0 0 10 20 30 40 50 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance 0.10 ID = 15 A R DS(on) - On-Resistance () 0.08 C - Capacitance (pF) 2800 3500 On-Resistance vs. Drain Current Ciss 0.06 2100 0.04 TA = 150 C 1400 0.02 TA = 25 C 0.00 4 5 6 7 8 9 10 700 Coss 0 Crss 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Capacitance Document Number: 69846 S-81956-Rev. B, 25-Aug-08 www.vishay.com 3 New Product SUD50N10-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 ID = 20 A VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Normalized) 15 VDS = 50 V VDS = 80 V 10 2.0 2.5 ID = 15 A VGS = 10 V 1.5 5 1.0 0 0 20 40 60 80 100 0.5 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 100 TJ = 150 C TJ = 25 C 1 VGS(th) Variance (V) 0.7 On-Resistance vs. Junction Temperature 10 I S - Source Current (A) 0.2 - 0.3 ID = 5 mA - 0.8 0.1 - 1.3 0.01 - 1.8 ID = 250 A 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 2.3 - 50 - 25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Temperature (C) Source-Drain Diode Forward Voltage 300 600 Threshold Voltage 240 500 400 Power (W) 180 Power (W) 300 120 TA = 25 C 60 200 TC = 25 C 100 0 0.001 0 0.01 0.1 1 Time (s) 10 100 1000 0.001 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient Single Pulse Power, Junction-to-Case www.vishay.com 4 Document Number: 69846 S-81956-Rev. B, 25-Aug-08 New Product SUD50N10-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1000 1000 100 I D - Drain Current (A) I D - Drain Current (A) Limited by R DS(on)* 10 s, 100 s 100 Limited by R DS(on)* 10 s, 100 s 1 ms 10 ms 100 ms, DC 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 1s 10 s 100 s, DC 10 100 1000 10 1 0.1 TC = 25 C Single Pulse 0.01 0.1 1.0 0.01 0.1 1.0 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 10 60 Safe Operating Area, Junction-to-Case 8 I D - Drain Current (A) I D - Drain Current (A) 50 Package Limited 40 6 30 4 20 2 10 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (C) TC - Case Temperature (C) Current Derating**, Junction-to-Ambient Current Derating**, Junction-to-Case ** The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69846 S-81956-Rev. B, 25-Aug-08 www.vishay.com 5 New Product SUD50N10-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4.0 3.5 3.0 Power (W) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 175 180 160 140 120 Power (W) 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (C) TC - Case Temperature (C) Power Derating**, Junction-to-Ambient Power Derating**, Junction-to-Case ** The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69846 S-81956-Rev. B, 25-Aug-08 New Product SUD50N10-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.05 2. Per Unit Base = RthJA = 95 C/W 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69846. Document Number: 69846 S-81956-Rev. B, 25-Aug-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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